Functional Materials for (Opto)electronics, Sensors, Detectors, and Green Energy.

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications, and theoretical studies of functional semiconductor materials and devices. Each issue aims to provide a snapshot of current insights, new achievements, breakthroughs, perspectives, and future trends in material sciences for such diverse fields as advanced electronics and opto-electronics, sensors and detectors, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film deposition and growth technology, hybrid and quantum materials, device fabrication technology, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography, etching, doping, annealing, and thin film processing for submicron and nano devices; material and device failure, reliability, damage evolution, and related issues; advanced chemical and physical vapor deposition; advanced metallization and interconnect schemes; compound semiconductor materials and processing; new dielectrics and non-oxide materials and their applications; (macro)molecular, hybrid, heterostructure, and quantum materials, devices, and processing; molecular dynamics, ab-initio methods, Monte Carlo simulations, data intensive and machine-learning based approaches, etc.; new materials and processes for discrete and integrated circuits; advanced electronic packaging materials and processes; magnetic materials and spintronics; crystal growth technology and mechanism; intrinsic impurities and defects of materials. Pure device simulation and modelling without connection to experiment is not within the aim and scope of this journal.

Special Issue on Control of Semiconductor Interfaces and Group-IV Semiconductor Engineering Technologies (ISCSI-X & ICSI/ISTDM 2025)
Día de Entrega: 2026-03-31

The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) is held in Yokohama, Japan, from November 10-13, 2025, aiming for global collaboration dedicated to semiconductor interfaces and group-IV semiconductor engineering technologies. Please submit papers related to ISCSI-X & ICSI/ISTDM 2025. Submission of papers, which are not presented at ISCSI-X & ICSI/ISTDM 2025, is also welcome.

Guest editors:

Taizoh Sadoh, Kyushu University, Fukuoka, Japan
Katsunori Makihara, Nagoya University, Nagoya, Japan
Tatsuro Maeda, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Koji Kita, The University of Tokyo, Tokyo, Japan
Tetsuya Yamamoto, Kochi University of Technology, Kami, Japan

Special issue information:

The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) is held in Yokohama, Japan, from November 10-13, 2025, aiming for global collaboration dedicated to semiconductor interfaces and group-IV semiconductor engineering technologies. Please submit papers related to ISCSI-X & ICSI/ISTDM 2025. Submission of papers, which are not presented at ISCSI-X & ICSI/ISTDM 2025, is also welcome.

1. Thin Film Growth and Characterization
- Si, Strained Si, Ge, SiGe(C), GeSn, SiC, Diamond, Silicide, Compound semiconductors, III-nitrides, Oxide semiconductors,
- High-k insulator, Low-k insulator
- Epitaxial growth, CVD, MBE, Selective epitaxy, Atomic layer control, Novel growth technique
- Band engineering, Defect engineering, Theory and Simulation, and modeling

2. Surface and Interface Control
- Surface passivation and modification, Surface and interface chemistry
- Schottky and ohmic contacts
- Atomic scale characterization of surfaces and interfaces
- Surface/interface issues in advanced devices

3. Formation and Characterization of Nanostructures
- Nanodots, Nanowires, Superlattice, Self-assembling, Self-organization
- Synthesis of low-dimensional materials (2D materials etc.)
- Nanoscale characterization, In-situ characterization, Epitaxy equipment technology, Metrology challenges

4. Process and Device Technology
- Impurity diffusion, Dry etching, Microfabrication, Isolation, Heterostructure devices combined with 2D materials, SiGe gate, Source/drain and channel engineering, Base/emitter engineering
- SOI, SGOI, III-V on Si, Wafer bonding, Virtual substrates and their Manufacturing
- CMOS, HBT, BiCMOS, FeRAM, MODFET, SET, RTD, LED, LD, OEIC
- Advanced thermal processing, Source/drain & channel engineering, Base/emitter engineering, Fin FET/GAAFET, Semiconductor-superconductor integration, Photonic devices, Quantum technology

Manuscript submission information:

Submission Deadline: 31 March 2026

Submission Site: Editorial Manager®

Article Type Name: "VSI: ISCSI & ICSI/ISTDM" - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact Leading Guest Editor.

For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

    interface
    surface
    semiconductor
    insulator
    thin film
    nanostructure

Special Issue on Advanced Electronic Packaging and Heterogenous Integration for Future Artificial Intelligence Applications
Día de Entrega: 2026-11-01

Guest editors:

Chong Leong Gan, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Min-Hua Chung, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Chen-Yu Huang, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Hong Wan Ng, Micron Semiconductor Asia, Singapore
Kuan-Neng Chen, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Special issue information:

This special issue aims to provide a platform for both academic and industrial researchers to share their most recent works on the development of semiconductor device processing technologies, heterogenous integration technical challenges and mitigation strategies. Novel and forefront research studies on semiconductor packaging, simulation and modelling, materials innovations as well as testing methodologies to resolve key fabrication and packaging failures are crucial in enabling the next decades of semiconductor advancements for future AI applications.

This special issue collects regular and review papers on but not limited to the subjects below.

1. Chip to packaging interactions (CPI), package to silicon integration and study
2. Heterogenous integration in memory and semiconductor devices
3. Materials innovations and characterizations in advanced semiconductor packaging
4. Advanced 3D packaging technologies such as Cu-Cu bonding, hybrid bonding, CuSn bonding technologies in HBM (High Bandwidth Memory) and CoWoS (Chip-on-wafer on Substrate) packaging
5. Quality and reliability assessment in advanced 2.5D and 3D packaging
6. Advanced semiconductor testing methodologies, testing hardware and strategies
7. Novel materials and testing methods for future high performance computing such HBM (High Bandwidth memory), Cryogenic memory applications.8. Packaging process improvements, wafer level integration process challenges, yield mitigations and enhancements
9. Mechanical, thermal and process simulation and modeling in advanced packaging technologies
10. Digital twins and applications in advanced packaging

Manuscript submission information:

Submission Deadline: 1 November 2026

Submission Site: Editorial Manager®

Article Type Name: "VSI: Advanced Packaging" - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact the Leading Guest Editor.

For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

3D Memory device packaging, High Bandwidth Memory Packaging, Heterogeneous Integration, Materials Innovations and Memory reliability, Materials Innovation